Design and Simulation of High Tuning range and High Quality factor MEMS Variable Capacitor in Standard CMOS Technology

  • Mina Ashoori Sadjad Institute of Higher Education , Mashhad , Iran.
  • Hooman Nobovati Department of Electrical Engineering, Sadjad Institute of Higher Education , Mashhad , Iran.


This article is organized to represent the work specifications of micro electro mechanical gap-tuning capacitors and to increase the both of tuning range and quality factor, a three-plate capacitor which can be fabricated in standard 0.18 μm CMOS technology is designed and simulated. The simulation of the capacitor was done using the EM3DS software and the simulation results show tuning range of 100%, that is 2 times higher than tuning range of the conventional parallel plate capacitor. The plates of this capacitor are designed by using the available metal layers in the TSMC 0.18 μm CMOS technology that have caused decreasing the series resistance and increasing  the quality factor to 300 in 1 GHZ.


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How to Cite
Ashoori, M., & Nobovati, H. (2013). Design and Simulation of High Tuning range and High Quality factor MEMS Variable Capacitor in Standard CMOS Technology. Majlesi Journal of Telecommunication Devices, 2(3). Retrieved from