Design and Simulation of a Fully Integrated, Low-Power, 2.5Gb/s Optical Front-End

  • Tahereh Shafiei Islamic Azad University of Shiraz
  • Soorena Zohoori Department of Electrical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Iran
  • Mehdi Dolatshahi
Keywords: Trans-impedance Amplifier, Limiting Amplifier, Integrated Optical Receiver

Abstract

 This paper, describes a CMOS trans-impedance amplifier (TIA) and Limiting Amplifier (LA) for 2.5Gb/s, low-power opto-electronic communication receiver systems. The single ended TIA, which benefits form active type of inductors, is designed and simulated using 0.18µm CMOS process parameters. The proposed circuits are analyzed mathematically and all necessary simulations for proving the proper performance of the proposed TIA stage and the proposed LA stage such as eye-diagram, MONTECARLO and noise analysis are done. Simulation results in HSPICE show the trans-impedance gain of 45.5dBΩ, frequency bandwidth of 1.85GHz and power consumption of 1.1mW at 1.5V supply for the TIA stage and 87dB gain and 2GHz frequency bandwidth for the whole receiver system, which consumes only 7.3mW power. Results indicate that the proposed circuits are suitable to work as a low-power building block as opto-electrical communication receiver.

References

B. Razavi, “Design of Integrated Circuits for Optical Communications” , Wiley series in lasers and applications , 2nd edition, 2003

F. Aznar, S. Celma and B. Calvo, “CMOS Receiver Front-Ends for Giga-bit short-range optical Communications”, Springer Science+Business Media New York, 2013

C. Y. Wang, and C. S. Wang, “ An 18mw two stage CMOS transimpedance amplifier for 10Gb/s Optical Application”, In proceedings of IEEE Asian Solid-state Circuits Conference in Jeju, pp. 412-415, 2007.

J. Kim and J. Buckwalter, “Bandwidth enhancement with low group-delay variation for a 40 Gb/s Transimpedance Amplifier”, IEEE Transaction on Circuits and Systems, TCAS I, Vol. 57, pp.1964-1972, 2010.

F. Aflatouni and H. Hashemi, “ A wideband 57dbΩ Transimpedance Amplifier in 0.13µm CMOS in IEEE radio Frequency Integrated Circuits Symposium”, Digest of papers in Boston, pp.57-60, 2009.

W. Chen, Y. Cheng and D. Lin. “ A 1.8v 10Gbps Fully Integrated CMOS Optical Receiver Analog Front End”, IEEE Journal of Solid State Circuits, Vol. 40, pp.3904-3907, 2007.

C. Toumazou, and S. M . Park, “Low-noise Current-Mode CMOS Transimpedance Amplifier for Giga-Bit Optical Communication”, IEEE Proc. ISCAS, vol. 3, June 1998

J. Lee, and S. j. Song, “A Multichip on oxide of 1Gb/s 80db Fully Differential CMOS Transimpedance Amplifier for optical Interconnect Applications”, ISSCC, pp. 80-81, Feb. 2002.

Y. Wang, and R. Raut, “ A Design of Transresistor Amplifier for High Gain bandwidth Applications,” 10th IEEE International Conference on Electronics, Circuits and Systems, pp. 185-188. 2003.

Y. Wang, and r. Raut, “A 0.18µm CMOS Fully Differential Transimpedance Amplifier for optical Receiver,” 2nd IEEE Northeast Workshop on Circuits and Systems, pp. 229-232, 2004.

Y. Wang, and r. Raut, “A 2.4GHz db Fully Differential CMOS Transimpedance for Optical Receiver Based on Wide-Swing Cascode,” IEEE International Conference on Electronics, pp. 1601-1605, 2005

Y. Wang, and r. Raut, “A 2.4GHz db Fully Differential CMOS Transimpedance for Optical Receiver Based on Wide-Swing Cascode,” IEEE International Conference on Electronics, pp. 1601-1605, 2005

H. Fenfei and D. jingxing, “ 0.35µm SiGe BiCMOS front-end amplifier for 10Gb/s optical Receiver” international conference on microwave and millimeter Wave technology, ICMMT, pp. 249-252, 2008

B. Razavi , "Design of Analog CMOS Integrated Circuits " , MacGraw – Hill Series in Electrical and Computer Engineering, 2002.

S. Galal and B. Razavi, “Broadband ESD Protection Circuit in CMOS Technology” Digest of IEEE ISSCC, pp. 182-183, 2003.

Published
2018-12-01
How to Cite
Shafiei, T., Zohoori, S., & Dolatshahi, M. (2018). Design and Simulation of a Fully Integrated, Low-Power, 2.5Gb/s Optical Front-End. Majlesi Journal of Telecommunication Devices, 7(4), 161-169. Retrieved from http://journals.iaumajlesi.ac.ir/td/index/index.php/td/article/view/502
Section
Articles