Design and simulation of an Improved NEMFET with Low Leakage Current and Sub-threshold Swing

  • Nastaran Jafari Yadegar-e-Emam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran
  • Farshad Babazadeh Yadegar-e-Emam Khomeini , IAU
  • Zahra Ahangari Islamic Azad University
Keywords: field effect transistor, NEMFET, Nanoelectromechanical Systems


In this paper design and simulation of an improved depletion-mode n-channel nanoelectromechanical field effect transistor (NEMFET) at 300K is reported. The designed NEMFET is based on NEMS technology and fully compatible with CMOS fabrication process. A NEMFET is composed of a NEM relay and a MOSFET and comprises a movable gate and a semiconductor part, so that the flowing current is always in the semiconductor part. The nanomechanical movable gate was a bossed doubly clamped beam and simulated by COMSOL Multiphysics software and the electrical part was designed and simulated by ATLAS software. The designed NEMFET had a 25 nm length, 100 nm width and 5.2 nm thicknesses. Optimization was done by applying two 8.5 nm spaces, one between source to gate and the other between gate to drain. Simulation results show in the proposed structure, sub-threshold swing was decreased to 86 mV/dec and the Ion/Ioff ratio was increased to 8.68×104.


Karnik,Tanay, and Peter Hazucha, "Characterization of soft errors caused by single event upsets in CMOS Processes," IEEE Transactions on Dependable and Secure Computing 1.2: PP. 128-143, 2004.

Takeda, E., Kume, H., Toyabe, T., & Asai, S,. "Submicrometer MOSFET structure for minimizing hot-carrier generation," IEEE Transactions on Electron Devices, 29(4), PP. 611-618.I.S, 1982.

Kam, Hei, et al, "A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics," IEEE International Electron Devices Meeting. IEDM Technical Digest. IEEE, 2005.

Enachescu, Marius, et al. "Ultra low power NEMFET based logic," IEEE International Symposium on Circuits and Systems (ISCAS2013). IEEE, 2013.

Enachescu, Marius, et al. "Low-Leakage 3D Stacked Hybrid NEMFET-CMOS Dual Port Memory," IEEE Transactions on Emerging Topics in Computing, 2016.

Haldar, Ritwik, Koushik Guha, and Srimanta Baishya. "Effect on pull-in voltage and current in NEMFET by scaling channel length," TENCON IEEE Region 10 Conference. IEEE, 2015.

COMSOL Multiphysics® version 5.2a.

Osterberg, P., Yie, H., Cai, X., White, J., & Senturia, S, "Self-consistent simulation and modelling of electrostatically deformed diaphragms," In Micro Electro Mechanical Systems, MEMS'94, Proceedings, IEEE Workshop on pp. 28-32, 1994.

Kim, J. H. , "Near Zero Sub-threshold Swing Nano-Electro-Mechanical Field Effect Transistor with Suspended Germanium/Silicon Core/Shell Nanowire Channel." University of California, San Diego, 2013.

ATLAS User Manual, Santa Clara, USA: Silvaco International, 2015.

How to Cite
Jafari, N., Babazadeh, F., & Ahangari, Z. (2018). Design and simulation of an Improved NEMFET with Low Leakage Current and Sub-threshold Swing. Majlesi Journal of Telecommunication Devices, 7(4), 151-154. Retrieved from