Modelling of Drain Current of MOSFET Transistor in Terms of Gate Oxide Thickness

  • Masoud Pourgholam Babol Noshirvani University of Technology
  • Bahram Azizollah Ganji

Abstract

Study on effects of changing the oxide thickness, can give us a view of the aspects of MOSFET, in field of design of the transistor elements. Changing the oxide thickness affects on both Cox and Vt. At first, in this paper, the relation between the threshold voltage and oxide thickness will be discussed. Then, the relation between the drain current and oxide thickness will be modeling. The result is a nonlinear and parabolic relationship between the drain current and oxide thickness. To ensure the authenticity of the obtained model, a MOSFET parameters, based on 5 µm CMOS technology was designed. This MOSFET was simulated with COMSOL software and obtained mathematical model analyzed with MATLAB. Finally, the data were compared, which confirmed the authenticity of the mathematical model.

Author Biography

Masoud Pourgholam, Babol Noshirvani University of Technology
Electrical Engineering Department, MSc Student

References

[1] C. C. Hu, Modern Semiconductor Devices for Integrated Circuits, California, Berkeley: Prentice Hall, 2009.

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[4] I. Safayat-Al, “Effects of gate insulator thickness and diameter over on/off current ratio in ballistic CNTFETs, ” International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering, vol. 2, no. 11, pp. 5424-5429, 2013.

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Published
2016-05-31
How to Cite
Pourgholam, M., & Azizollah Ganji, B. (2016). Modelling of Drain Current of MOSFET Transistor in Terms of Gate Oxide Thickness. Majlesi Journal of Telecommunication Devices, 5(2). Retrieved from http://journals.iaumajlesi.ac.ir/td/index/index.php/td/article/view/342
Section
Articles