A Ultra Wideband (5–50 GHz) and Low Power Active Balun Using 0.18 µm CMOS technology

  • mohammad sarvghad moghadam

Abstract

A new ultra wideband 5 to 50 GHz and low power single ended input, differential output active balun using 0.18µm CMOS technology is presented in this paper. Using a pair of common-source and common gate NMOS transistors with utilize active load PMOS transistors. Total power consumption of the proposed active balun circuit is 5mw at the supply voltages of ±1.2v much less than 11.5mw of the conventional active balun.

Published
2014-01-01
How to Cite
sarvghad moghadam, mohammad. (2014). A Ultra Wideband (5–50 GHz) and Low Power Active Balun Using 0.18 µm CMOS technology. Majlesi Journal of Telecommunication Devices, 2(4). Retrieved from http://journals.iaumajlesi.ac.ir/td/index/index.php/td/article/view/123
Section
Articles