Design and Analysis of Quantum Dot Based Avalanche Photodiode with Intersubband Multiplication

  • Amir Yousefli Department of Electrical Engineering Islamic Azad University, Ahar Branch Tabriz
  • Mahdi Zavvari Department of Electrical Engineering, Urmia branch, Islamic Azad university, Urmia, Iran
  • Kambiz Abedi Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti, University, G. C. 1983963113, Tehran, Iran.


This article presents an avalanche photodiode with quantum dot layers in its active region which operates at 10µm. Performance of this structure is based on intersubband impact ionization phenomenon in quantum dots. It requires lower energy threshold for the onset of avalanche phenomenon, hence it can work in lower operating voltages than bulks. In this paper, by presenting a theoretical approach for  intersubband transition rate and electron-electron interaction the photo-generated current was modeled and consequently the responsivity can be calculated.  Results show that peak responsivity at a voltage of 14V is obtained about 1.9 A/W. Also the dark current is modeled and calculated at different temperatures and applied voltages.


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How to Cite
Yousefli, A., Zavvari, M., & Abedi, K. (2014). Design and Analysis of Quantum Dot Based Avalanche Photodiode with Intersubband Multiplication. Majlesi Journal of Telecommunication Devices, 3(2). Retrieved from