Design of High Isolation Ka-band Radio Frequency MEMS Capacitive Shunt Switch

  • Reza Pourandoost Sadjad Institute for Higher Education
  • Saber Izadpanah Tous Sadjad Institute for Higher Education
  • Hooman Nabovati Sadjad Institute for Higher Education
  • Khalil Mafinejad Sadjad Institute for Higher Education

Abstract

Radio frequency (RF) micro electro-mechanical systems (MEMS) switches are rapidly replacing the PIN diodes and field-effect transistors (FET). Linear behavior, low power consumption, low insertion loss, high isolation, improvement power handling and etc. are benefits of MEMS switches. This paper presents a high isolation RF MEMS capacitive switch with two shunt beams for Ka-band (27-40 GHz) applications such as in communications satellites. Simulation results using Ansoft’s high frequency simulation software (HFSS) at Ka-band shows in the down-state of switch, the isolation (S21) is > 47 dB and return loss (S11) is < 0.3 dB. In the up-state, the insertion loss (S21) is less than 0.15 dB and the return loss (S11) is more than 18 dB. The pull down voltage of designed switch is 5.13 V and down-state to up-state capacitance ratio (Cd/Cu=12.11pF/0.137pF) is 88.39. Also a novel index material (IM2) is proposed to determine optimum material using Ashby approach. In this paper the Aluminum (Al) is chosen for the membrane for having low pull down voltage and silicon nitride (Si3N4) is chosen for dielectric for having faster switching speed and larger down-state capacitance.

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Published
2014-01-01
How to Cite
Pourandoost, R., Izadpanah Tous, S., Nabovati, H., & Mafinejad, K. (2014). Design of High Isolation Ka-band Radio Frequency MEMS Capacitive Shunt Switch. Majlesi Journal of Telecommunication Devices, 2(4). Retrieved from http://journals.iaumajlesi.ac.ir/td/index/index.php/td/article/view/110
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Articles