A 0.8 V 191.9 nW DTMOS Current Mirror OTA in 0.18 μm CMOS Process

  • Iman Khosrojerdi Imam Reza International University
  • Amin Rezvani Imam Reza International University
  • Reza Pourandoost sadjad institute of higher education


In this paper a low-noise low-power CMOS operational transconductance amplifier (OTA) using dynamic threshold voltage MOSFET (DTMOS) technique is presented. The OTA is designed and simulated using 0.18 µm CMOS technology. The performed simulation results show an input-referred noise of 520.2 nV/√Hz at 1 mHz so reduces to 115.8 pV/√Hz at 1 Hz, and a power consumption of 191.9 nW under 5 pF loads. The dc open loop gain is 53.13 dB, a phase margin of 50o and a unity gain-bandwidth (UGB) of 572.9 kHz while operating at 0.8 V supply voltage. The proposed OTA is suitable for low noise and low-power application such as medical application

Author Biography

Iman Khosrojerdi, Imam Reza International University
Imam Reza International University


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How to Cite
Khosrojerdi, I., Rezvani, A., & Pourandoost, R. (2013). A 0.8 V 191.9 nW DTMOS Current Mirror OTA in 0.18 μm CMOS Process. Majlesi Journal of Telecommunication Devices, 2(3). Retrieved from http://journals.iaumajlesi.ac.ir/td/index/index.php/td/article/view/109